MSCSM70XM45CTYZBNMG

FET, MOSFET Arrays Overview

The MSCSM70XM45CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module by Microchip Technology. It integrates SiC MOSFETs (Q1-Q6, Q8), SiC diodes (CR1-CR8), an IGBT (Q9/Q10), and shunts. Key ratings include 700 V VDSS for SiC devices, 1200 V VCES for the IGBT, and 30 A IF for SiC diodes. The module features low stray inductance, a Si3N4 substrate, and an AlSiC base plate.

FET, MOSFET Arrays Feature Summary

• Integrates Silicon Carbide (SiC) MOSFETs and Schottky Diodes for high-efficiency switching.
• Includes an internal PTC thermistor for precise junction temperature monitoring.
• Utilizes a Silicon Nitride (Si3N4) substrate and Aluminum Silicide (AlSiC) base plate for thermal management.
• Features lead frames for power connections to enable direct heatsink mounting.

FET, MOSFET Arrays Applications

• Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) systems
• High reliability Power Core Module (PCM)
• Modular power module for Power Drive Electronic (PDE)

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip distributors or representatives. Confirm datasheet revision DS00004984A matches the delivered unit. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly due to device sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring integrated braking, soft start, and solenoid control alongside three-phase drive capabilities. Consider the specific voltage ratings of 700 V for SiC components and 1200 V for the IGBT when designing the power stage. Evaluate the thermal resistance characteristics against the system's cooling requirements.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's portfolio of wide-bandgap power modules. It combines advanced SiC technology with traditional IGBT solutions to provide a compact, high-performance solution for demanding electromechanical actuation environments.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

FET, MOSFET Arrays FAQ

What is the isolation voltage rating between terminals and the case?

The RMS isolation voltage from any terminal to the case is rated at 4000 V for 1 minute at 1 bar pressure.

How is the junction temperature monitored within the module?

The module includes an internal PTC thermistor with a resistance of 1000 Ω at 0 °C for temperature monitoring.

What materials are used for the substrate and base plate?

The module utilizes a Silicon Nitride (Si3N4) substrate for improved thermal performance and an Aluminum Silicide (AlSiC) base plate for extended reliability and reduced weight.