MSH150N60

$0.48

Description：N Channel MOSFET,150V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:b47719ec1b9b Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,150V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5060-8
Package / Case：8-PowerVDFN

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MSH150N60

Overview

The MSH150N60 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching applications. It features a Drain-Source Voltage (VDS) of 150 V and a continuous drain current (ID) of 23 A at 25°C case temperature. The device guarantees a maximum on-resistance (RDS(on)) of 70 mΩ at VGS = 10V and ID = 10A. It supports a single pulse avalanche energy (EAS) of 16.2 mJ with L = 0.1mH. Operating within a junction temperature range of -55 to +150 °C, the component provides superior dv/dt capability and is packaged in a PDFN 5x6 format.

Feature Summary

Utilizes advanced trench DMOS technology to minimize on-resistance and enhance switching performance.
Provides improved dv/dt capability and withstands high energy pulses in avalanche and commutation modes.
Features 100% guaranteed single pulse avalanche energy (EAS) testing.

Applications

Power management in TV converters
Automotive systems
White LED boost converters
DC/DC converters

Procurement Notes

Verify the specific package marking and revision status against the Bruckewell Technology Corporation datasheet Rev. A before procurement. Confirm that the PDFN 5x6 footprint matches your PCB layout requirements. Ensure thermal design accounts for the specified junction-to-ambient resistance values under your operating conditions. Validate that the 150V rating aligns with your circuit's maximum voltage stress.

Selection Notes

Select this component when designing circuits requiring low on-resistance and fast switching speeds within a 150V voltage window. Consider its suitability for applications demanding robust avalanche energy handling capabilities. Evaluate the PDFN 5x6 package dimensions against available board space constraints. Assess thermal dissipation needs based on the specified power ratings at different ambient temperatures.

Part Context

This part belongs to the family of N-Channel MOSFETs manufactured by Bruckewell Technology Corporation. It represents a semiconductor solution tailored for modern power electronics where efficiency and compact packaging are critical. The device leverages trench DMOS architecture to deliver optimized electrical characteristics compared to standard planar technologies.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and absolute maximum ratings if considering alternative manufacturers' components for this application.