MSH40P07D

Description：P Channel MOSFET,Dual,40V,DFN5X6
Series：-

SKU:c62ecddd1a07 Category: FET, MOSFET Arrays Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：P Channel MOSFET,Dual,40V,DFN5X6
Series：-
Mfr：Bruckewell
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：18.8A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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MSH40P07D

Overview

The MSH40P07D is a dual P-channel MOSFET utilizing trench DMOS technology, designed for high-efficiency fast switching applications. It features a drain-source voltage of -40V and a continuous drain current of -18.8A at 25°C case temperature. The static drain-source on-resistance is typically 38mΩ at VGS=-10V and ID=-6A, with a maximum of 45mΩ. The device supports a pulsed drain current of -50A and single pulse avalanche energy of 28.8mJ. Power dissipation reaches 25W at 25°C case temperature, with a junction-to-ambient thermal resistance of 85°C/W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Trench DMOS technology minimizes on-resistance and enhances switching performance.
Guaranteed 100% EAS capability for robust operation in avalanche and commutation modes.
Improved dv/dt capability suitable for demanding power environments.

Applications

Motor Drive
LED Lighting
Hand-held Device

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing procurement. Confirm that the PDFN 5x6 package dimensions align with the target PCB land pattern requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a compact dual P-channel configuration is required for low-voltage power switching. Evaluate the 45mΩ maximum on-resistance against system efficiency targets. Consider the -40V rating for compatibility with standard 24V or lower bus architectures. Verify that the 25W power dissipation limit meets the thermal design constraints of the enclosure.

Part Context

This component belongs to Bruckewell Technology Corporation's lineup of advanced trench DMOS devices. It is specifically engineered to balance low conduction losses with high-speed switching capabilities. The dual configuration allows for space-saving designs in applications requiring complementary or parallel channel arrangements.

Replacement Considerations

Consult official substitution lists from Bruckewell Technology Corporation for verified alternatives. Cross-reference pinout compatibility and electrical parameters such as RDS(on) and VDS ratings when evaluating potential replacements.

FAQ

What is the maximum single pulse avalanche energy for the MSH40P07D?

The device guarantees a single pulse avalanche energy of 28.8 mJ under test conditions of VDD=25V, L=0.1mH, and IAS=-24A.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (VGS(th)) is specified between -1V and -2.5V at TJ=25°C. Figure 3 in the datasheet illustrates the normalized VGS(th) versus junction temperature characteristics.