MSR622AJE288-10

Memory IC Overview

The MSR622AJE288-10 is a high-bandwidth burst memory component manufactured by MoSys, Inc. It features a 576Mbit capacity with an 8M x 72 organization. The device utilizes a parallel interface and operates with an access time of 3.2 ns. It is housed in a 288-FCBGA package measuring 19x19 mm. This RLDRAM memory IC is designed to eliminate data throughput bottlenecks in demanding applications.

Memory IC Feature Summary

• High-bandwidth burst memory architecture
• Parallel interface for system integration
• RLDRAM technology for performance optimization

Memory IC Applications

• Line cards requiring high throughput
• Systems with data access bottlenecks
• Demanding network infrastructure applications

Memory IC Procurement Notes

Verify the specific suffix JE against official MoSys documentation to confirm package type and speed grade. Ensure compatibility with existing PCB footprints for the 288-FCBGA form factor. Cross-reference electrical specifications with current datasheets to validate operational parameters before procurement.

Memory IC Selection Notes

Select this component when system design requires high bandwidth burst capabilities to mitigate data throughput limitations. Consider the 288-FCBGA package constraints and parallel interface requirements during layout. Evaluate the 3.2 ns access time against system timing budgets to ensure signal integrity and performance targets are met.

Memory IC Part Context

MoSys specializes in innovative memory ICs that enhance system speed. The MSR622 series addresses throughput challenges in line cards and complex systems. This part represents a solution for eliminating access bottlenecks in high-performance computing environments.

Memory IC Replacement Considerations

Consult official MoSys substitution guides for verified equivalents. Generic SRAM replacements may not support the specific burst architecture or RLDRAM protocol required by this application.