MSRT150160A

MSRT150160A

$24.86
  • Description:DIODE MOD GP 1600V 150A 3TOWER
  • Series:-

SKU:efa8767bd977 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MOD GP 1600V 150A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1600 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 150 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT150160A

Overview

The MSRT150160A is a silicon carbide diode array module featuring a common cathode configuration with two discrete elements. It supports a repetitive peak reverse voltage of 1600 V and an average forward current of 150 A per element. The device utilizes a Three Tower package style for chassis mounting, designed to handle high-power applications efficiently.

Feature Summary

  • Dual-element common cathode architecture for bridge rectification
  • High-voltage capability suitable for demanding power conversion systems
  • Robust thermal management via chassis mount interface

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar inverter systems

Procurement Notes

Verify component authenticity through authorized distributors due to the prevalence of counterfeit power semiconductors. Confirm that the specific lot date code aligns with project requirements, as manufacturing batches may vary slightly in packaging or labeling despite identical electrical specifications. Ensure proper handling procedures are followed during installation.

Selection Notes

Select this component when designing circuits requiring high blocking voltages exceeding standard silicon limits. The common cathode topology simplifies bridge rectifier implementation compared to individual discrete diodes. Evaluate thermal resistance characteristics against the heatsink design to ensure junction temperatures remain within safe operating limits under maximum load conditions.

Part Context

This module belongs to the MSRT series of high-power Schottky barrier rectifiers manufactured by GeneSiC Semiconductor. The series focuses on silicon carbide technology to provide superior performance over traditional silicon devices in terms of switching speed and thermal efficiency. It serves as a critical component in modern high-efficiency power electronics.

Replacement Considerations

  • MSRT150140A

FAQ

What is the package type for the MSRT150160A?

The device uses a Three Tower package style designed for chassis mounting.

Is this a single diode or an array?

It is a diode array containing one pair of common cathode elements.

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$24.86
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