MSS25-145-B10D

RF Diode Overview

The MACOM MSS25-145-B10D is a P-type silicon Schottky detector featuring a beam lead B10D outline. It operates with a typical forward voltage of 220 mV and a maximum of 260 mV at 1 mA. Junction capacitance ranges from 0.10 pF to 0.12 pF, while dynamic resistance has a maximum value of 52 Ω. The device supports frequencies up to 18 GHz and includes a breakdown voltage minimum of 3 V at 10 µA. Power dissipation reaches 150 mW per junction, with an operating temperature range spanning -65°C to +150°C.

RF Diode Feature Summary

• Optimized for superior 1/f noise performance on P-type silicon epitaxial substrates using proprietary processing techniques.
• Provides better temperature stability compared to zero-bias configurations and requires minimal forward bias current for low-power detection.
• Features a low barrier height design and is passivated with silicon nitride for enhanced reliability.

RF Diode Applications

• Microwave detectors for small power levels below -30 dBm
• Zero-bias detection applications at higher power levels
• High-frequency signal monitoring in RF systems

RF Diode Procurement Notes

Verify the specific B10D beam lead configuration against schematic footprints before ordering. Confirm that the 150 mW power dissipation rating aligns with thermal management requirements. Ensure the -65°C to +150°C operating range meets environmental specifications. Cross-reference the 18 GHz frequency limit with system bandwidth needs. Validate that the silicon nitride passivation is compatible with assembly processes.

RF Diode Selection Notes

Select this component when low 1/f noise and high temperature stability are critical for microwave detection tasks. The B10D beam lead package suits high-frequency layouts requiring minimal parasitic inductance. Consider the 220 mV typical forward voltage for biasing circuitry design. Evaluate the 0.10 pF to 0.12 pF junction capacitance impact on signal integrity at frequencies approaching 18 GHz.

RF Diode Part Context

This part belongs to the MSS25-xxx-x Series of P-type silicon Schottky detectors manufactured by MACOM Technology Solutions. The series includes chip, beam lead, and packaged variants optimized for microwave detection. The MSS25-145-B10D specifically utilizes the B10D beam lead outline, distinguishing it from C15c or 0402 options within the same family.

RF Diode Replacement Considerations

MSS25-141-B10D offers similar beam lead packaging but differs in electrical parameters including higher forward voltage and dynamic resistance. MSS25-143-B10D provides intermediate characteristics between the 141 and 145 models. Verify compatibility of these alternatives regarding junction capacitance and frequency limits before substitution.