Memory IC MT41J256M16HA-093:E product image

MT41J256M16HA-093:E

  • Description:IC DRAM 4GBIT PAR 96FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:17173c1a8633 Category: Brand:

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MT41J256M16HA-093:E is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 4GBIT PAR 96FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT41J256M16HA-093:E

  • Description:IC DRAM 4GBIT PAR 96FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR3
  • Memory Size:4Gbit
  • Memory Organization:256M x 16
  • Memory Interface:Parallel
  • Clock Frequency:1.066 GHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.425V ~ 1.575V
  • Operating Temperature:0°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:96-TFBGA
  • Supplier Device Package:96-FBGA (9x14)
  • Access Time:20 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT41J256M16HA-093:E

MT41J256M16HA-093:E

Memory IC Overview

The Micron MT41J256M16HA-093:E is a 4 Gbit DDR3 SDRAM organized as 32 Meg x 16 across eight internal banks. It operates at a nominal VDD and VDDQ of 1.5V ±0.075V with a maximum clock frequency of 1.066 GHz (DDR3-2133). The device features a 96-ball FBGA package measuring 8mm x 14mm. Key timing parameters include a tFAW of 30ns, tRCD of 13.09ns, tRP of 13.09ns, and CL of 13.09ns. It supports an operating temperature range from 0°C to +95°C.

Memory IC Feature Summary

  • Supports reduced four activate window (tFAW) timing of 30ns for 2KB page sizes.
  • Features differential bidirectional data strobes and differential clock inputs.
  • Includes programmable CAS read latency, additive latency, and write latency.
  • Provides nominal and dynamic on-die termination for data, strobe, and mask signals.

Memory IC Applications

  • High-performance computing systems requiring fast memory access
  • Graphics processing units and display controllers
  • Network infrastructure equipment

Memory IC Procurement Notes

Verify the specific speed grade and revision suffix against current Micron catalogs, as availability may vary. Confirm that the 30ns tFAW specification aligns with system requirements, as it supersedes standard 35ns limits. Ensure compatibility with 1.5V power supplies and check for any lead-free packaging compliance documentation required by regional regulations.

Memory IC Selection Notes

Select this component when a 4 Gbit capacity with a 16-bit interface is required in a compact 96-ball FBGA form factor. The -093 speed grade offers high-frequency operation suitable for demanding bandwidth applications. Consider the reduced tFAW capability if the design involves frequent row activations within short timeframes compared to standard DDR3 devices.

Memory IC Part Context

This part belongs to the Micron MT41J series of 4Gb DDR3 SDRAMs. It utilizes the HA marking for the 96-ball FBGA package. The :E revision indicates the specific die or manufacturing update. It is designed to meet industry-standard DDR3 electrical specifications while offering optimized timing characteristics for performance-sensitive environments.

Memory IC Replacement Considerations

Standard DDR3-2133 parts with 35ns tFAW are functionally compatible but offer slower burst refresh rates. Verify pinout compatibility with other 96-ball FBGA DDR3 devices from different manufacturers before substitution.

MT41J256M16HA-093:EMT41J256M16HA-093:E

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