MT46V16M8P-75:D

Memory IC Overview

The Micron MT46V16M8P-75:D is a 128Mb Double Data Rate (DDR) SDRAM featuring an internal organization of 4 Meg x 8 across four banks. It utilizes a 66-pin Thin Shrink Small Outline Package (TSOP). The device operates with a cycle time of 7.5ns at a CAS latency of 2, supporting a maximum clock frequency of 133MHz. Standard power supply requirements are VDD and VDDQ at +2.5V ±0.2V, while DDR400 speeds require +2.6V ±0.1V. It supports programmable burst lengths of 2, 4, or 8.

Memory IC Feature Summary

• Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle
• Differential clock inputs (CK and CK#) for precise command registration on positive edges
• Bidirectional data strobe (DQS) providing source-synchronous data capture aligned with read and write operations
• Four internal banks allowing concurrent operation to maximize effective bandwidth

Memory IC Applications

• General-purpose high-speed memory systems requiring 128Mb density
• Embedded applications utilizing standard SSTL_2 compatible interfaces
• Systems requiring low-power standby modes such as precharge power-down and self-refresh

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required system timing constraints, as the -75 designation indicates a 7.5ns cycle time. Confirm that the lead-free TSOP package variant aligns with assembly specifications. Ensure the revision code corresponds to the intended manufacturing lot. Cross-reference the pinout against the target PCB design to account for no-connect pins in the 66-pin configuration.

Memory IC Selection Notes

Select this component when a 128Mb capacity with an 8-bit data width is required. The 66-pin TSOP package is suitable for applications prioritizing longer leads for improved mechanical reliability. Verify compatibility with the host controller's supported CAS latencies and burst lengths. Consider the thermal environment, as the commercial temperature rating covers 0°C to 70°C.

Memory IC Part Context

This part belongs to the Micron 128Mb DDR SDRAM family, which includes x4, x8, and x16 configurations. All variants share the same core architecture and feature set but differ in data bus width and bank organization. The x8 configuration provides a balance between density and interface complexity compared to the narrower x4 or wider x16 options within the same product line.

Memory IC Replacement Considerations

Compatible substitutes include other Micron 128Mb DDR SDRAMs with identical 66-pin TSOP packaging and matching electrical characteristics. Ensure any replacement maintains the same speed grade (-75) and voltage requirements to guarantee signal integrity and timing compliance.