MV2105RLRA

Overview

The MV2105RLRA is a silicon abrupt variable capacitance diode designed for HF to UHF band applications. It features a nominal capacitance of 15 pF and a maximum reverse voltage rating of 30 V. The device utilizes a plastic TO-226AC (CASE 182-02) package with two pins. Key electrical characteristics include a minimum breakdown voltage of 30 V, a diode capacitance tolerance of 10%, and a minimum capacitance ratio of 2.5.

Feature Summary

• Abrupt junction profile optimized for high-frequency tuning applications
• High reliability construction suitable for demanding environments
• Plastic encapsulation in a standard through-hole leaded package

Applications

• HF to UHF frequency tuning circuits
• Voltage-controlled oscillator (VCO) varactor elements
• RF filter tuning networks

Procurement Notes

Verify the specific suffix RLRA against official onsemi documentation to confirm exact binning or testing criteria. Confirm RoHS compliance status as older Motorola/NXP variants may differ from current manufacturing standards. Ensure the TO-226AC package dimensions match the target PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component when an abrupt capacitance-voltage characteristic is required for wide tuning range applications in the HF/UHF spectrum. Verify that the 15 pF nominal capacitance and 30 V reverse voltage ratings align with the circuit design specifications. Consider the TO-226AC package constraints for assembly methods and thermal management needs.

Part Context

This part belongs to the MV210x family of silicon varactor diodes originally developed by Motorola and later acquired by NXP/onsemi. These devices are engineered for stable performance across high-frequency ranges. The MV2105 variant specifically targets applications requiring precise capacitance control with low loss characteristics in RF signal paths.

Replacement Considerations

Cross-reference with MV2105RLRP for potential pin-compatible alternatives within the same family. Verify functional equivalence regarding capacitance ratios and breakdown voltages before substitution.