MV2N4861UB

Overview

The MV2N4861UB is a Silicon N-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single configuration designed for surface-mount installation. Key electrical specifications include a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. The device supports a maximum power dissipation of 1.8 W and operates within a temperature range from -65°C to +200°C. At zero gate-source voltage, the drain current is specified at 80 mA, with an on-resistance of 60 Ohms.

Feature Summary

• Utilizes silicon technology for robust semiconductor performance
• Designed for surface-mount device (SMD/SMT) integration
• Supports extended high-temperature operation up to 200°C

Applications

• High-temperature electronic circuit design
• Surface-mount transistor applications requiring specific JFET characteristics

Procurement Notes

Verify the exact suffix against official Microchip documentation to confirm package type and material compliance. Confirm availability status directly with authorized distributors as supply levels fluctuate. Ensure the ordering part number matches the required surface-mount configuration and thermal specifications for your specific design constraints.

Selection Notes

Select this component when a surface-mount N-channel JFET with a 30 V breakdown rating and high thermal tolerance is required. Compare the 80 mA drain current and 60 Ohm resistance against circuit requirements. Ensure the SMD footprint aligns with the PCB layout and that the operating environment stays within the specified -65°C to +200°C range.

Part Context

This component belongs to the Microchip JFET product line, specifically categorized under transistors. It serves as a discrete semiconductor device for analog and RF signal processing applications where junction field-effect technology is preferred over MOSFETs for specific impedance or noise characteristics.