MW6S004NT1

Overview

The MW6S004NT1 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for Class A or AB base station applications up to 2000 MHz. It supports analog and digital modulation with a typical output power of 4 Watts PEP at 28 Volts. Key performance metrics include a drain efficiency of 33% and intermodulation distortion (IMD) of -34 dBc at 1960 MHz, or -39 dBc at 900 MHz. The device features on-chip RF feedback for broadband stability and can handle a 5:1 VSWR.

Feature Summary

• Designed for Class A or AB base station applications supporting analog and digital modulation
• Features on-chip RF feedback for broadband stability across the operating frequency range
• Capable of handling high output mismatch conditions without failure
• Includes integrated electrostatic discharge protection mechanisms

Applications

• Base station amplifier modules
• Analog modulation amplification systems
• Digital modulation amplification systems
• Multicarrier amplifier applications

Procurement Notes

Verify the component authenticity by checking the manufacturer markings against official datasheet specifications. Confirm the package style matches the PLD 1.5 designation and ensure the suffix T1 corresponds to the specified reel packaging requirements. Cross-reference the part number with current NXP Semiconductor documentation to validate revision status before procurement.

Selection Notes

Select this component for designs requiring stable RF amplification in the 1-2000 MHz range. Ensure the bias circuitry provides the necessary 28 Vdc supply and appropriate gate voltage for Class A or AB operation. Verify that the thermal management solution accommodates the junction-to-case thermal resistance values provided in the datasheet to maintain safe operating temperatures.

Part Context

This device belongs to the family of RF power field effect transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. It is specifically engineered as a lateral MOSFET structure optimized for radio frequency power amplification tasks in telecommunications infrastructure equipment.

Replacement Considerations

Consult official NXP Semiconductor documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous electrical and mechanical validation.

FAQ

What is the maximum Drain-Source Voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is +68 Vdc.

How does the IMD performance vary between frequencies?

At 1960 MHz, the typical IMD is -34 dBc, while at 900 MHz, it improves to -39 dBc under similar test conditions.

What is the moisture sensitivity level of this component?

The Moisture Sensitivity Level is rated as 3 according to JESD 22-A113 standards.