MWE6IC9100NBR1-FR

Overview

The MWE6IC9100NBR1-FR is an RF power amplifier from the HV6E series, manufactured by Freescale Semiconductor. It is designed for broadband commercial and industrial applications operating within the 860 MHz to 960 MHz frequency range. The device utilizes LDMOS technology and is housed in a TO-272WB14 package.

Feature Summary

• Enhancement-mode lateral MOSFET design optimized for broadband performance
• Suitable for broadcast and industrial applications across specified frequency bands
• Integrated thermal management capabilities via exposed pad package

Applications

• Broadband commercial transmitters
• Industrial RF heating and plasma generation
• Broadcast infrastructure amplification

Procurement Notes

Verify the FR suffix indicates tape-and-reel packaging configuration against official NXP/Freescale documentation. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Ensure the component matches the exact HV6E series revision.

Selection Notes

Select this component for applications requiring stable gain and efficiency in the 860-960 MHz band. Consider the TO-272WB14 package for thermal dissipation needs. Evaluate drive level requirements and impedance matching networks suitable for LDMOS devices in broadband configurations.

Part Context

This part belongs to the HV6E family of RF power LDMOS transistors. These devices are engineered for high linearity and power density. The family supports various frequency ranges, with this specific model targeting the upper VHF/UHF spectrum for robust signal amplification.

Replacement Considerations

Check for MWE6IC9100NBR1 as a potential variant without the reel suffix. Verify cross-reference availability with other HV6E series parts if pinout and electrical characteristics align with system requirements.