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The MWI50-12E7 is a six-pack IGBT module manufactured by IXYS, utilizing NPT3 technology. It integrates three IGBTs and three free-wheeling diodes in an industry-standard package with an isolated copper base plate. The device features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC25) of 90 A at 25°C case temperature. Typical saturation voltage (VCE(sat)) is 1.9 V at 25°C and 2.1 V at 125°C for IC = 50 A. The integrated HiPerFRED diode offers fast reverse recovery with a typical trr of 200 ns. Thermal resistance from junction to case is 0.35 K/W per IGBT and 0.61 K/W per diode.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the part number matches the specific datasheet revision. Check for RoHS compliance status as indicated in official documentation. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to installation.
Select this module for applications requiring high voltage isolation and robust short-circuit withstand capability. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the operating temperature range limits when designing heatsinking solutions. Verify gate drive voltage compatibility with the ±20 V maximum rating.
This component belongs to the MWI series of six-pack IGBT modules from IXYS. It is designed for medium-power industrial applications. The MKI50-12E7 variant shares similar electrical characteristics but targets different application niches such as transformer primary winding supply. Both variants utilize the same core packaging technology.
Public confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching electrical ratings, pin configurations, and thermal characteristics with alternative manufacturers' offerings.