MWI50-12E7

MWI50-12E7

  • Description:IGBT MODULE 1200V 90A 350W E2
  • Series:-

SKU:0eb9f8ac1366 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT MODULE 1200V 90A 350W E2
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • IGBT Type:NPT
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:E2
  • Supplier Device Package:E2
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):90 A
  • Power - Max:350 W
  • Current - Collector Cutoff (Max):800 µA
  • Input Capacitance (Cies) @ Vce:3.8 nF @ 25 V

Download product information

MWI50-12E7

Overview

The MWI50-12E7 is a six-pack IGBT module manufactured by IXYS, utilizing NPT3 technology. It integrates three IGBTs and three free-wheeling diodes in an industry-standard package with an isolated copper base plate. The device features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC25) of 90 A at 25°C case temperature. Typical saturation voltage (VCE(sat)) is 1.9 V at 25°C and 2.1 V at 125°C for IC = 50 A. The integrated HiPerFRED diode offers fast reverse recovery with a typical trr of 200 ns. Thermal resistance from junction to case is 0.35 K/W per IGBT and 0.61 K/W per diode.

Feature Summary

  • NPT3 IGBT technology providing low saturation voltage and positive temperature coefficient for easy paralleling
  • HiPerFRED diode integration ensuring fast reverse recovery and low leakage current
  • Short circuit SOA capability with a rated duration of 10 µs
  • Square RBSOA design optimized for performance in resonant circuits

Applications

  • AC drives
  • Power supplies with power factor correction
  • Motor control systems including DC motor armature and excitation windings
  • Welding equipment and X-ray machines

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the part number matches the specific datasheet revision. Check for RoHS compliance status as indicated in official documentation. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to installation.

Selection Notes

Select this module for applications requiring high voltage isolation and robust short-circuit withstand capability. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the operating temperature range limits when designing heatsinking solutions. Verify gate drive voltage compatibility with the ±20 V maximum rating.

Part Context

This component belongs to the MWI series of six-pack IGBT modules from IXYS. It is designed for medium-power industrial applications. The MKI50-12E7 variant shares similar electrical characteristics but targets different application niches such as transformer primary winding supply. Both variants utilize the same core packaging technology.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching electrical ratings, pin configurations, and thermal characteristics with alternative manufacturers' offerings.

MWI50-12E7MWI50-12E7

Click on the inquiry