MWT-3F

Overview

The MWT-3F is a GaAs MESFET device featuring a nominal 0.25 micron gate length and 300 micron gate width, designed for high-gain and linearity applications in the 500 MHz to 26 GHz frequency range. It delivers power outputs ranging from +20 to +22 dBm. The component provides 12 dB small signal gain at 18 GHz with an output power of 22 dBm at the same frequency. All chips are passivated with Silicon Nitride (SiN).

Feature Summary

• Utilizes a 0.25 micron refractory metal/gold gate structure.
• Provides excellent performance for high linearity amplifier applications.
• Suitable for both wideband and narrow-band operational modes.

Applications

• Commercial linear amplifier systems
• Military communication equipment
• High-reliability space applications

Procurement Notes

Verify the specific package type required, as the MWT-3F is available in Chip form factor or three distinct package types: 70, 71, and 73. Confirm that the silicon nitride passivation meets environmental requirements. Ensure design parameters align with the specified 6V drain-source voltage and current limits to maintain reliability within the stated operating temperature range.

Selection Notes

Select this component when designing circuits requiring high linearity and consistent gain across the 500 MHz to 26 GHz spectrum. The 300 micron gate width supports power outputs up to +22 dBm, making it appropriate for mid-power stages. Evaluate thermal management strategies suitable for bare die or packaged configurations depending on the chosen variant.

Part Context

The MWT-3F belongs to the MwT series of RF MOSFET transistors manufactured by CML Micro. This series focuses on gallium arsenide technology optimized for microwave frequencies. The device serves as a core active element for amplification stages in modern radio frequency infrastructure.

Replacement Considerations

No public confirmed substitute part numbers are documented for the MWT-3F.

FAQ

What is the maximum operating frequency of the MWT-3F?

The MWT-3F is rated for operation up to 26 GHz.

How is the chip surface protected?

All MWT-3F chips are passivated with Silicon Nitride (SiN).

What are the physical dimensions of the bare chip?

The chip dimensions are 415 x 260 microns with a thickness of 100 microns.