MWT-5F

Overview

The MWT-5F is a dual-gate GaAs MESFET featuring a nominal 0.25-micron gate length and 300-micron dual gate width, designed for high gain and linearity in the 500 MHz to 26 GHz range. It delivers 19 dB small-signal gain and 21 dBm P1dB output power at 12 GHz. The device utilizes refractory metal/gold gates and SiN passivation. Physical dimensions are 415 x 260 microns with a 100-micron thickness.

Feature Summary

• Dual-gate architecture optimized for high gain and linear amplifier applications
• Refractory metal and gold gate construction for reliability
• Silicon nitride (SiN) passivation layer

Applications

• High gain amplifiers
• High linear amplifiers
• Wideband systems (e.g., 2 to 26 GHz)
• Narrow-band RF circuits
• Commercial, military, and hi-rel space applications

Procurement Notes

Verify component authenticity through authorized CML Micro distributors or direct manufacturer channels. Confirm datasheet revision status prior to integration. Ensure handling protocols match semiconductor requirements due to bare die packaging. Validate supply chain documentation against current product lifecycle notices.

Selection Notes

Select this component when wideband performance from 500 MHz to 26 GHz is required alongside high linearity. The dual-gate design supports complex impedance matching networks. Evaluate thermal management strategies suitable for bare die mounting on substrates. Consider system-level noise figure contributions relative to the specified gain characteristics.

Part Context

Part of the MwT series of GaAs FETs manufactured by CML Microsystems. The device represents a specialized discrete RF solution distinct from integrated MMIC amplifiers. It serves as a foundational active element for custom RF front-end designs requiring specific frequency coverage and power handling capabilities.

Replacement Considerations

No public confirmed substitute part numbers are available.