MWT-773

Overview

The MWT-773 is a GaAs RF MOSFET transistor manufactured by CML Micro. It operates at frequencies up to 26 GHz with an 11 dB gain and 20 dBm output power. The device features a continuous drain current of 26 mA and requires a 3 V supply. It is designed for SMD/SMT installation in a packaged form factor, suitable for medium-power RF applications.

Feature Summary

• Utilizes Gallium Arsenide (GaAs) technology for high-frequency performance
• Provides 11 dB gain and 20 dBm output power at 26 GHz
• Designed for surface-mount installation

Applications

• Medium power RF amplification
• Wireless communication systems
• Point-to-point radio links

Procurement Notes

Verify the specific package variant and moisture sensitivity level before ordering. Confirm that the 26 GHz frequency range aligns with system requirements. Check for end-of-life status or alternative recommendations from the manufacturer. Ensure handling procedures account for the sensitive nature of GaAs components during assembly.

Selection Notes

Select this component when a GaAs-based solution is required for frequencies near 26 GHz. Consider the 20 dBm output power limit for linear or saturated operation needs. Evaluate the 3 V operating voltage against available power rails. Compare gain specifications against other RF FET options for noise figure and linearity requirements.

Part Context

This part belongs to CML Micro's portfolio of RF MOSFET transistors. These devices are engineered for microwave and millimeter-wave applications. The MWT series typically offers robust performance in compact packages. They serve as key active elements in RF front-end designs requiring moderate power levels.

Replacement Considerations

Consult official substitution lists for direct replacements. Verify pinout compatibility and electrical parameter equivalence. Ensure thermal characteristics match the original design constraints.