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The MwT-7F is a GaAs MESFET device featuring a nominal 0.25 micron gate length and 250 micron gate width, designed for high-gain and medium linear power applications within the 500 MHz to 26 GHz frequency range. It delivers an output power of 21 dBm at 12 GHz with a small signal gain of 15 dB at the same frequency. The component supports continuous drain currents up to 85 mA and operates at a maximum temperature of +150°C. Available in chip form or packaged types, it utilizes SiN passivation.
Verify the specific package type required, as the base part number corresponds to multiple packaging options including Chip, MwT-7F70, MwT-7F71, and MwT-7F73. Confirm that the selected variant meets the necessary environmental and reliability standards for the intended deployment environment before finalizing procurement orders.
Select this component when designing circuits requiring high gain and medium linear power across a broad microwave spectrum. The device is suitable for both wideband and narrow-band implementations. Ensure the design accommodates the specified DC operating conditions and thermal limits to maintain performance integrity.
The MwT-7F belongs to the MwT series of RF MOSFET transistors manufactured by CML Micro. These devices utilize GaAs technology and are engineered for demanding radio frequency environments. The series provides versatile solutions for amplification and oscillation tasks in specialized communication systems.
MwT-7F73
Yes, the device is equally effective for wideband applications, such as those ranging from 6 to 18 GHz, as well as narrow-band implementations.
Processing which guarantees low phase noise makes the MwT-7F particularly attractive for oscillator applications.