MWT-LN300

$19.20

Description：RF MOSFET PHEMT FET 2.5V DIE
Series：-

SKU:89c3b900e414 Category: RF FETs, MOSFETs Brand: CML Micro

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Product introduction

Product Detailed Parameters

Description：RF MOSFET PHEMT FET 2.5V DIE
Series：-
Mfr：CML Micro
Package：Case
Technology：pHEMT FET
Frequency：26GHz
Gain：10dB
Voltage - Test：2.5 V
Current Rating (Amps)：-
Noise Figure：0.6dB
Current - Test：25 mA
Power - Output：-
Voltage - Rated：4 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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MWT-LN300

Overview

The MWT-LN300 is a super low noise, quasi-enhancement-mode pHEMT device featuring a nominal 0.15 micron gate length and 300 micron gate width. It delivers a minimum noise figure of 0.6 dB at 12 GHz with an associated gain of 10.0 dB under standard bias conditions (Vds=2.5V, Ids=25mA). The device provides 15.0 dBm output power at 1dB compression at 12 GHz. It operates effectively up to 30 GHz for both wideband and narrow-band applications.

Feature Summary

Quasi-enhancement-mode architecture optimized for ultra-low noise performance
High associated gain suitable for sensitive signal amplification
Robust construction screened for high-reliability space and military environments

Applications

Super low noise amplifier stages in communication systems
Commercial and military radio frequency front-ends
Hi-Rel space application signal processing

Procurement Notes

Verify the specific datasheet revision and screening level required for your mission profile. Confirm that the quasi-enhancement mode biasing requirements align with your circuit design, as optimal noise performance depends on precise Vgs settings. Ensure thermal management solutions accommodate the specified chip thermal resistance values during integration.

Selection Notes

Select this component when minimizing noise figure is the primary design constraint over a broad frequency range up to 26 GHz. Consider the quasi-enhancement mode operation which allows for simpler biasing compared to depletion modes while maintaining superior noise characteristics. Evaluate the physical dimensions and pad configuration against your substrate layout capabilities.

Part Context

This device belongs to the MwT-LN series of super low noise pHEMT devices manufactured by CML Micro (formerly MwT Inc.). These components are designed for high-performance RF applications requiring exceptional sensitivity. The technology utilizes advanced semiconductor processes to achieve low noise figures and high linearity in compact die formats.