MWT-LN600

Overview

The MWT-LN600 is a super low noise, quasi enhancement-mode pHEMT device featuring a 0.15 micron gate length and 600 micron gate width. It delivers a minimum noise figure of 0.2 dB at 4 GHz and 0.5 dB at 12 GHz, with associated gain of 11.0 to 12.0 dB at 4 GHz and 8.0 to 9.0 dB at 12 GHz. The device achieves 20.0 dBm output power at 1dB compression at 12 GHz. Maximum ratings include a drain-source voltage of 4.5V to 5.5V and a channel temperature limit of +175°C.

Feature Summary

• Quasi enhancement-mode pHEMT technology for ultra-low noise performance
• Optimized for wideband (e.g., 6 to 18 GHz) and narrow-band applications
• Capable of high associated gain up to 20 GHz
• Screened for quality and reliability in space and military environments

Applications

• Commercial RF systems requiring super low noise
• Military communication equipment
• High-reliability space applications

Procurement Notes

Verify the specific datasheet version and revision date before procurement, as specifications may evolve. Confirm that the supplier provides appropriate screening documentation for space or military qualification if required by the application. Ensure the ordering entity is authorized to handle components intended for high-reliability sectors. Check for any recent product change notifications regarding manufacturing location or material composition.

Selection Notes

Select this component when minimizing noise figure is critical across wide bandwidths up to 20 GHz. The quasi enhancement-mode characteristic simplifies biasing, allowing operation near zero volts for optimal noise performance. Consider the chip package format and thermal resistance requirements for the specific mounting configuration. Evaluate the trade-off between noise figure and gain based on the target frequency band within the 4 GHz to 12 GHz range.

Part Context

The MWT-LN600 belongs to the MwT family of high-performance semiconductor devices designed for demanding RF applications. Manufactured using advanced pHEMT processes, it targets markets where signal integrity and low noise are paramount. The device complements other high-frequency transistors by offering a balance of low noise and moderate power output in a compact die form factor suitable for custom microwave circuits.

Replacement Considerations

No direct public substitute part numbers are documented for the MWT-LN600. Designers should evaluate alternative pHEMT devices with similar gate widths and noise figures, ensuring compatibility with existing bias networks and impedance matching structures.

FAQ

What is the recommended gate-source voltage for best noise figure?

For best noise figure, the Vgs bias voltage should be set at either 0 or slightly positive voltages to achieve the target operating current.

Is the MWT-LN600 an enhancement or depletion mode device?

It is a quasi enhancement-mode pHEMT device.

What are the maximum continuous drain-source voltage limits?

The maximum continuous drain-source voltage ranges from 4.5V to 5.5V depending on specific conditions.