MWT-PH11F

Overview

The MWT-PH11F is a 12 GHz AlGaAs/InGaAs pHEMT device featuring a nominal 0.25 micron gate length and 2400 micron gate width. It delivers 33 dBm output power, 12 dB small signal gain, and 45% PAE at 12 GHz. The chip measures 780 x 345 microns with a thickness of 100 microns.

Feature Summary

• Utilizes AlGaAs/InGaAs pHEMT technology for high power and high power added efficiency up to 12 GHz
• Features a 0.25 micron gate length and 2400 micron gate width optimized for wideband or narrow-band applications
• Constructed using reliable metal systems and passivated to ensure excellent reliability

Applications

• High Power Amplifier Applications
• High Power Added Efficiency Applications
• Commercial Applications
• Military Applications
• Hi-Rel Space Applications

Procurement Notes

Verify the specific package variant required, as the component is available in versions with or without via holes (MWT-PH11FV). Confirm that the selected packaging type aligns with the intended assembly process and thermal management requirements for the target application environment.

Selection Notes

Select this component when designing circuits requiring high output power and efficiency near 12 GHz. Ensure the design accommodates the bare die form factor and utilizes appropriate substrate materials to support the specified gate dimensions and thermal dissipation needs.

Part Context

This part belongs to the MwT series of microwave transistors from CML Microcircuits. These devices are engineered for demanding RF environments, offering robust performance through advanced semiconductor material systems suitable for critical communication and radar systems.

Replacement Considerations

No public confirmed substitute part numbers are documented.