MWT-PH15F

Overview

The MWT-PH15F is a 28 GHz medium power AlGaAs/InGaAs pHEMT device featuring a nominal 0.25 micron gate length and 630 micron gate width. It delivers 28.5 dBm typical output power, 12 dB small signal gain, and 45% PAE at 18 GHz. The chip measures 785 x 260 microns with a thickness of 100 microns.

Feature Summary

• AlGaAs/InGaAs pHEMT technology for high-gain and medium power applications
• Refractory metal/gold gate structure ensuring excellent reliability
• Suitable for both wideband (e.g., 6 to 18 GHz) and narrow-band operations

Applications

• Commercial RF amplifier and oscillator circuits
• Military communication systems
• High-reliability space applications

Procurement Notes

Verify the specific package variant required, as the manufacturer lists distinct packaging options such as MwT-PH8F70, MwT-PH8F71, and MwT-PH8F73. Confirm that the component meets the necessary environmental and reliability standards for the intended commercial, military, or space deployment before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring operation up to 28 GHz with medium power output capabilities. The device is optimized for applications demanding high gain and high power-added efficiency. Ensure the design accommodates the bare die form factor and utilizes appropriate mounting techniques for reliable thermal and electrical performance.

Part Context

This part belongs to the MwT series of GaAs pHEMT devices manufactured by CML Microsystems. These components are engineered for robust performance in demanding RF environments, utilizing advanced semiconductor materials to achieve high frequency operation and efficient power handling across various bandwidths.

Replacement Considerations

No public confirmed substitute part numbers are available.