MWT-PH29F

Overview

The MWT-PH29F is an AlGaAs/InGaAs pHEMT device designed for medium power, gain, and high power-added efficiency applications up to 18 GHz. It features a nominal 0.25-micron gate length and 800-micron gate width. At 12 GHz, it delivers 28.5 dBm output power, 13 dB small signal gain, and 48% PAE. The chip dimensions are 450 x 375 microns with a thickness of 100 microns.

Feature Summary

• Utilizes AlGaAs/InGaAs pHEMT technology with refractory metal/gold gates
• Suitable for wideband (6 to 18 GHz) or narrow-band operations
• Passivated construction ensures excellent reliability

Applications

• Commercial RF systems
• Military communication equipment
• High-reliability space applications

Procurement Notes

Verify the specific package variant required, as the standard MWT-PH29F designation corresponds to bare die. Official packaging options include MwT-PH29F70, MwT-PH29F71, and MwT-PH29F73. Confirm that the selected variant meets the mechanical handling requirements for the intended assembly process before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high gain and medium power output within the 18 GHz range. The 800-micron gate width provides a balance between power capability and gain performance. Ensure thermal management strategies account for the specified maximum operating temperature limits during continuous operation.

Part Context

This part belongs to the MwT series of microwave transistors manufactured by CML Microcircuits. These devices are engineered using reliable metal systems and passivation techniques to support demanding RF environments. The series covers various frequency ranges and power levels for amplifier and oscillator designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.