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Product Detailed Parameters
- Description：RF MOSFET PHEMT FET 3V CHIP
- Series：-
- Mfr：CML Micro
- Package：Case
- Technology：pHEMT FET
- Frequency：26GHz
- Gain：14dB
- Voltage - Test：3 V
- Current Rating (Amps)：90mA
- Noise Figure：-
- Current - Test：1 mA
- Power - Output：24dBm
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：Die
- Supplier Device Package：Chip
- Configuration：-
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Overview
The MWT-PH33F is a medium power AlGaAs/InGaAs pHEMT device designed for applications requiring high gain and medium power up to a 26 GHz frequency range. It features a nominal 0.25 micron gate length and 300 micron gate width, making it suitable for both wideband (e.g., 6 to 18 GHz) and narrow-band uses. At 18 GHz, the device delivers 24 dBm of output power with 14 dB small signal gain and 45% typical power added efficiency.
Feature Summary
- Utilizes AlGaAs/InGaAs pHEMT technology with refractory metal/gold gates for excellent reliability
- Optimized for medium power, high gain, and high power added efficiency applications
- Effective for both wideband and narrow-band RF designs
Applications
- Commercial RF systems
- Military communication equipment
- High-reliability space applications
Procurement Notes
Verify specific packaging requirements before ordering, as the base die is available in distinct package variants including MwT-PH33F70, MwT-PH33F71, and MwT-PH33F73. Confirm that the selected variant meets your handling and integration needs. Ensure all electrical limits are respected during continuous operation to maintain design goals for mean-time-to-failure.
Selection Notes
Select this component when designing circuits operating within the 26 GHz range that require medium power output. The device is particularly effective for wideband applications spanning 6 to 18 GHz or specific narrow-band implementations. Consider the physical dimensions of 415 x 315 microns and 100 microns thickness for board layout compatibility.
Part Context
This part belongs to the MwT series of GaAs pHEMT devices from CML Microsystems. These components are engineered for robust performance in demanding RF environments. The MwT-PH33F specifically targets the intersection of gain and power efficiency at millimeter-wave frequencies.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Evaluate other MwT series pHEMTs based on matching gate width, frequency range, and power specifications.
