MWT-PH8F

Overview

The MWT-PH8F is an AlGaAs/InGaAs pHEMT device designed for high-gain and medium power applications up to 18 GHz. It features a nominal 0.25 micron gate length and 1200 micron gate width, delivering 30 dBm output power and 11 dB small signal gain at 12 GHz with 42% PAE. The chip measures 670 x 315 microns with a thickness of 100 microns. DC specifications are provided at Ta= 25 °C.

Feature Summary

• Utilizes AlGaAs/InGaAs pHEMT technology with refractory metal/gold gates
• Optimized for wideband or narrow-band applications requiring high efficiency
• Passivated construction ensures excellent reliability

Applications

• Commercial RF systems
• Military communication equipment
• High-reliability space applications

Procurement Notes

Verify the specific datasheet version against the manufacturer's official documentation before integration. Confirm that the die package type matches the intended assembly process. Ensure thermal management aligns with the absolute maximum ratings to prevent permanent damage or reduced mean-time-to-failure during continuous operation.

Selection Notes

Select this component when applications require medium power output combined with high gain in the microwave frequency range. The 1200 micron gate width supports higher current capabilities compared to narrower devices. Consider the bare die format for custom packaging solutions rather than standard surface-mount packages.

Part Context

This part belongs to the MwT series of pHEMT transistors from CML Micro. These devices are engineered for robust performance in demanding environments. The specific model targets frequencies up to 18 GHz, bridging the gap between lower frequency logic and higher frequency specialized components.

Replacement Considerations

No public confirmed substitute part numbers are available.