MWT-PH9F

Overview

The MWT-PH9F is a 26 GHz medium power AlGaAs/InGaAs pHEMT device featuring a nominal 0.25 micron gate length and 750 micron gate width. It delivers 28 dBm typical output power, 13 dB small signal gain, and 45% PAE at 12 GHz. The chip measures 485 x 315 microns with a thickness of 100 microns.

Feature Summary

• Utilizes reliable metal systems and passivation for excellent reliability
• Suitable for wideband or narrow-band applications up to 18 GHz
• Designed for high-gain and power applications

Applications

• Commercial applications
• Military applications
• Hi-Rel Space Applications

Procurement Notes

Verify the specific package variant required (MwT-PH9F70, MwT-PH9F71, or MwT-PH9F73) as packaging options differ. Confirm that the component meets all maximum rating limits to ensure mean-time-to-failure goals are maintained during continuous operation.

Selection Notes

Select this component for designs requiring high-gain and power outputs ranging from 400 to 500 milli-watts within the 18 GHz frequency range. Ensure biasing circuits accommodate the dual bias gold block requirements or single bias capacitor configurations specified in the datasheet.

Part Context

This part belongs to the MwT series of RF transistors manufactured by CML Microsystems Plc. It is specifically engineered as a pseudomorphic-high-electron-mobility-transistor (pHEMT) using AlGaAs/InGaAs technology for superior performance in microwave frequencies.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.