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The MX2N5114UB/TR is a P-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes Silicon technology and is housed in the UB surface-mount package. The device supports a maximum drain-gate voltage of 30 V, with an operating temperature range spanning from -65 °C to +200 °C. Rated power dissipation is 500 mW. This component is classified under JFETs within the broader transistor category.
Verify that the specific suffix /TR indicates tape-and-reel packaging when sourcing. Confirm the manufacturer datasheet aligns with the UB package dimensions and electrical characteristics. Ensure the requested part matches the P-Channel specification and 30 V rating required for the circuit design.
Select this component for applications requiring high-temperature operation and low noise performance. The UB package facilitates automated surface-mount assembly. Verify compatibility with the target voltage levels and ensure the thermal management strategy accommodates the specified power dissipation limits.
This part belongs to the Microchip JFET family, designed for specialized analog and RF applications. It provides stable performance across extreme temperatures. The UB package offers a compact footprint suitable for modern electronic designs requiring reliable semiconductor switching or amplification capabilities.
Cross-reference with other P-Channel JFETs in the UB package. Verify pinout compatibility and electrical parameters such as breakdown voltage and current ratings before substitution.
The maximum operating temperature is +200 °C.
It is a P-Channel JFET.