FET, MOSFET Arrays NDC7001C product image

NDC7001C

$0.62
  • Description:MOSFET N/P-CH 60V 0.51A SSOT6
  • Series:-

SKU:a5d3842cd016 Category: Brand:

  
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NDC7001C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 60V 0.51A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NDC7001C

  • Description:MOSFET N/P-CH 60V 0.51A SSOT6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:510mA, 340mA
  • Rds On (Max) @ Id, Vgs:2Ohm @ 510mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V, 66pF @ 25V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NDC7001C

NDC7001C

FET, MOSFET Arrays Overview

The NDC7001C is a dual enhancement-mode MOSFET from onsemi, integrating one N-channel and one P-channel transistor in an SSOT-6 surface-mount package. It features a drain-source breakdown voltage (Vds) of 60 V. The continuous drain current (Id) ratings are 340 mA for the N-channel and 510 mA for the P-channel. The maximum drain-source on-resistance (Rds(on)) is specified at 1 Ohm. Gate-source voltage limits are ±20 V, with threshold voltages of 1 V for the N-channel and 3.5 V for the P-channel. Gate charge values are 1.5 nC and 2.2 nC respectively. Power dissipation is 960 mW, operating within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual configuration combining N-channel and P-channel enhancement mode transistors in a single compact package.

FET, MOSFET Arrays Applications

  • Low-power switching applications requiring complementary channel control.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number NDC7001C with official onsemi documentation. Confirm the SSOT-6 package type and RoHS compliance status through authorized distribution channels. Ensure that the specific ordering suffix matches the required tape and reel or cut tape packaging format before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N/P-channel solution is needed in a small form factor. The 60 V rating and low gate charge support efficient operation in low-voltage digital interfaces. Verify that the 1 Ohm on-resistance meets the thermal and efficiency requirements of the target circuit design under expected load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the NDC7001 series of dual MOSFETs manufactured by onsemi. It utilizes silicon technology and is designed for surface mount assembly. The product falls under the broader category of discrete transistors and field-effect devices intended for general-purpose electronic applications.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for compatible dual MOSFETs with matching SSOT-6 footprints and similar electrical characteristics. Verify pinout compatibility and thermal performance before implementing any alternative components in existing designs.

NDC7001CNDC7001C
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