NDS8852H

FET, MOSFET Arrays Overview

The NDS8852H is a complementary MOSFET half bridge device manufactured by onsemi, originally developed by Fairchild Semiconductor. It integrates an N-channel and a P-channel enhancement-mode MOSFET in a single 8-SOIC surface-mount package. The N-channel component provides a continuous drain current of 4.3A with a maximum drain-source voltage of 30V and an on-resistance of 0.08Ω at VGS=10V. The P-channel counterpart supports -3.4A with identical voltage ratings and an on-resistance of 0.13Ω at VGS=-10V. Both transistors operate within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Complementary half-bridge configuration designed for matched input capacitance and power capability.
• High cell density DMOS technology engineered to minimize on-state resistance and enhance switching performance.
• Robust construction capable of withstanding high energy pulses during avalanche and commutation modes.

FET, MOSFET Arrays Applications

• Low voltage half-bridge driver circuits
• CMOS applications requiring simultaneous gate control
• Battery-powered circuit management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging options and tape-and-reel specifications. Confirm RoHS compliance status as the product may be classified as obsolete or non-compliant depending on the manufacturing date code. Ensure that the sourcing channel provides traceable documentation matching the original Fairchild Semiconductor part identification.

FET, MOSFET Arrays Selection Notes

Select this component when a matched pair of N-channel and P-channel MOSFETs is required for low-voltage switching applications. The integrated design ensures balanced electrical characteristics between the two channels. Verify that the 30V breakdown voltage and 4.3A current rating align with the specific load requirements of the target circuit design.

FET, MOSFET Arrays Part Context

This component belongs to the NDS885 series of complementary MOSFET arrays. Originally produced by Fairchild Semiconductor, the product line was transferred to onsemi following corporate acquisitions. The datasheet revision history indicates updates from preliminary information to full production specifications before eventual discontinuation.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult the manufacturer's obsolescence notices or cross-reference databases for equivalent complementary half-bridge devices.

FET, MOSFET Arrays FAQ

What is the maximum steady-state power dissipation for a single device?

The maximum power dissipation is 2.5W for a single device under standard thermal conditions.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises, with typical values rising from 0.08Ω at 25°C to approximately 0.13Ω at 125°C for the N-channel device.

What is the total gate charge for the N-channel transistor?

The total gate charge (Qg) for the N-channel device is typically 9.5nC and has a maximum value of 27nC when tested at VDS=10V, ID=3.4A, and VGS=10V.