NDS9936

FET, MOSFET Arrays Overview

The NDS9936 is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It utilizes high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. The device features a drain-source voltage of 30 V, continuous drain current of ±5.0 A at 25°C, and static drain-source on-resistance of 0.05 Ω at VGS = 10 V. It operates within a temperature range of -55°C to 150°C and is housed in an SO-8 surface mount package.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration in a widely used surface mount package for compact designs.
• High power and current handling capability suitable for demanding applications.
• Optimized for low voltage applications requiring fast switching and low in-line power loss.

FET, MOSFET Arrays Applications

• DC/DC conversion circuits
• Disk drive motor control systems
• Battery powered circuits

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete with Fairchild Semiconductor before procurement planning. Confirm that the manufacturer designation onsemi aligns with the original Fairchild Semiconductor documentation. Ensure compatibility with existing board layouts and thermal management strategies specified in the datasheet notes.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications where fast switching and low in-line power loss are critical. Consider the dual configuration for space-constrained designs. Evaluate thermal resistance requirements based on the specific PCB copper pad area and ambient conditions defined in the thermal characteristics section.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual N-channel enhancement mode field effect transistors produced using proprietary high cell density DMOS technology. It is designed to minimize on-state resistance while providing superior switching performance compared to standard single configurations.

FET, MOSFET Arrays Replacement Considerations

NDS9958 is a documented replacement part number for similar dual N & P-channel enhancement mode field effect transistors.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is ±5.0 A at an ambient temperature of 25°C.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.4 V when measured at VDS = VGS and ID = 250 µA.

What is the reverse recovery time of the body diode?

The reverse recovery time is typically 70 ns and maximally 160 ns under conditions of VGS = 0V, IF = 5 A, and dIF/dt = 100 A/µs.