NDS9952A-F011

FET, MOSFET Arrays Overview

The NDS9952A-F011 is a dual N- and P-channel enhancement mode field effect transistor manufactured by onsemi. It utilizes high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. The N-channel component supports a drain-source voltage of 30V with a continuous drain current of 3.7A and an on-resistance of 0.08Ω at VGS=10V. The P-channel component features a -30V drain-source voltage, a -2.9A continuous drain current, and an on-resistance of 0.13Ω at VGS=-10V. Both channels operate within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N- and P-channel MOSFET configuration in a single surface mount package
• High cell density DMOS technology for minimized on-state resistance
• Designed for fast switching and low in-line power loss
• Capable of withstanding high energy pulses in avalanche and commutation modes

FET, MOSFET Arrays Applications

• Notebook computer power management
• Battery powered circuits
• Low voltage applications requiring transient resistance

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix F011 against official documentation to confirm packaging details. Ensure the procurement channel provides valid traceability for semiconductor components. Confirm that the received parts match the publication order number NDS9952A/D specifications regarding electrical characteristics and thermal ratings before integration into designs.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring complementary N- and P-channel switching in a compact form factor. Evaluate the thermal resistance values relative to the intended copper pad area on the PCB. Consider the gate threshold voltage variations across the operating temperature range when designing drive circuits to ensure reliable turn-on and turn-off states under varying load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual MOSFETs produced using proprietary high-density processes. It serves as a compact solution for replacing discrete N- and P-channel transistors, reducing board space and simplifying assembly. The SO-8 package provides a widely used surface mount footprint suitable for automated manufacturing processes in consumer electronics and portable devices.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists or distributor databases for verified equivalent part numbers from onsemi or other manufacturers. Ensure any substitute maintains identical pinout configurations, voltage ratings, and thermal characteristics to guarantee functional compatibility without redesigning the host circuit.