NE25139-T1

NE25139-T1

$0.58
  • Description:RF MOSFET 5V SOT143
  • Series:-

SKU:3cc84b87545a Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 5V SOT143
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:900MHz
  • Gain:20dB
  • Voltage - Test:5 V
  • Current Rating (Amps):40mA
  • Noise Figure:1.1dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:13 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143
  • Configuration:Dual Gate

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NE25139-T1

Overview

The NE25139-T1 is a general-purpose dual-gate Gallium Arsenide (GaAs) MESFET manufactured by California Eastern Labs. It operates in the L to X-band frequency ranges, providing high-frequency performance suitable for RF applications. The component features a dual-gate structure designed for versatile signal processing tasks.

Feature Summary

  • Dual-gate GaAs MESFET architecture
  • General-purpose RF operation
  • L to X-band frequency capability

Applications

  • RF signal amplification
  • Frequency conversion circuits
  • Mixers and oscillators

Part Context

California Eastern Labs specializes in semiconductor components for communication systems. This device belongs to their portfolio of high-frequency GaAs MESFETs, engineered for reliability in demanding RF environments.

Replacement Considerations

Direct substitutes include the NEC NE25139-T1 and the standalone part number NE25139. These variants share identical functional descriptions as general-purpose dual-gate GaAs MESFETs.

NE25139-T1NE25139-T1
$0.58
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