NE3210S01

Description：RF MOSFET GAAS HJ-FET 2V SMD
Series：-

SKU:f5d8be84e94c Category: RF FETs, MOSFETs Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF MOSFET GAAS HJ-FET 2V SMD
Series：-
Mfr：CEL
Package：Strip
Technology：GaAs HJ-FET
Frequency：12GHz
Gain：13.5dB
Voltage - Test：2 V
Current Rating (Amps)：15mA
Noise Figure：0.35dB
Current - Test：10 mA
Power - Output：-
Voltage - Rated：4 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：4-SMD
Supplier Device Package：SMD
Configuration：-

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NE3210S01

Overview

The NE3210S01 is a super low noise amplifier IC designed for X to Ku band applications. It utilizes an N-channel Heterojunction Field-Effect Transistor (HJ-FET) technology. The component is manufactured by M/A-COM Technology Solutions, which operates under Renesas Electronics America. The device is packaged in an SMT-86 surface-mount configuration. This amplifier is engineered to provide high-performance signal amplification with minimal noise addition, suitable for demanding radio frequency and microwave environments.

Feature Summary

Super low noise performance optimized for X to Ku band frequencies
N-channel HJ-FET construction for enhanced RF efficiency
Surface-mount SMT-86 package design

Applications

Radio frequency front-end modules
Microwave communication systems
Satellite receiver low-noise stages

Procurement Notes

Verify the manufacturer designation carefully, as sources may list either NEC, Renesas Electronics America, or M/A-COM Technology Solutions due to corporate acquisitions. Confirm the specific package type matches the SMT-86 requirement. Ensure the datasheet aligns with X to Ku band specifications before procurement to avoid compatibility issues with existing circuit designs.

Selection Notes

Select this component when ultra-low noise figure is critical for X to Ku band reception. The N-channel HJ-FET technology offers distinct advantages over standard FETs in noise performance. Consider the SMT-86 footprint constraints during PCB layout. Evaluate thermal management requirements based on the specific power dissipation characteristics of the HJ-FET structure in the target application.

Part Context

This part belongs to the family of super low noise amplifiers utilizing HJ-FET technology. Originally associated with NEC, the product line is now managed by M/A-COM Technology Solutions under Renesas Electronics America. These components are specialized for high-frequency analog signal processing where noise integrity is paramount.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Cross-referencing requires detailed electrical parameter matching from official datasheets.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.