NE34018-A

Overview

The NE34018 is a GaAs Hetero-Junction FET in an SOT-343 package, designed for low noise amplification from 1 to 3 GHz. At VDS=2V and ID=5mA (2 GHz), it achieves a typical noise figure of 0.6 dB and associated gain of 16.0 dB. Maximum ratings include a drain-source voltage of 4 V, gate voltages of -3 V, channel temperature of 125°C, and total power dissipation of 150 mW. The device utilizes ion implantation for improved RF performance.

Feature Summary

• Low noise figure with high associated gain optimized for the L-to-S band
• Miniature plastic surface mount packaging for compact integration
• Ion implantation fabrication ensuring reliability and uniformity

Applications

• GPS receiver front ends
• PCS communication systems
• WLAN infrastructure components
• MMDS applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm I_DSS range and packaging format. Confirm that the component meets RoHS requirements if applicable to your design specifications. Ensure the supplier provides traceability documentation consistent with the original manufacturer's quality assurance standards.

Selection Notes

Select this component when minimizing noise figure is critical within the 1 to 3 GHz frequency range. Evaluate bias conditions carefully, as noise figure and gain vary significantly between VDS levels of 2 V and 3 V. Consider thermal resistance constraints due to the small package size and limited power dissipation capabilities.

Part Context

Originally manufactured by California Eastern Laboratories (CEL) and NEC, this part represents a specialized GaAs HJ-FET technology. It serves as a dedicated low-noise amplifier transistor rather than a general-purpose device. The component is distinct from standard bipolar or CMOS transistors used in similar frequency ranges.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Verify compatibility based on pinout, S-parameter matching, and noise figure requirements before considering alternative manufacturers' devices.

FAQ

What is the maximum allowable drain-source voltage?

The absolute maximum rating for Drain to Source Voltage (VDS) is 4 V.

How does the noise figure change with frequency?

At VDS = 2 V and IDS = 10 mA, the typical noise figure increases from 0.56 dB at 900 MHz to 0.82 dB at 4000 MHz.

What is the thermal resistance of the device?

The thermal resistance from channel to ambient (RTH(CH-A)) is 833 °C/W.