NE3503M04-A

Overview

The NE3503M04-A is a GaAs HJ-FET transistor designed for low noise amplification applications. It operates at a test frequency of 12 GHz with a typical noise figure of 0.55 dB and a gain of 11.5 dB under bias conditions of VDS = 2V and IDS = 10mA. The device features a gate length of 0.2 μm and a gate width of 160 μm, utilizing an M04 plastic SMD package.

Feature Summary

• Utilizes Gallium Arsenide (GaAs) heterojunction field-effect transistor technology
• Engineered for high-frequency low noise amplification in the microwave spectrum
• Incorporates a compact plastic surface-mount design

Applications

• Microwave receiver front-ends
• Satellite communication systems
• Point-to-point radio links

Procurement Notes

Verify the specific suffix 'A' against official manufacturer documentation to confirm any distinct electrical or mechanical variations compared to the standard NE3503M04 variant. Ensure compatibility with existing RF layout requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low noise performance at 12 GHz. Compare its 0.55 dB noise figure and 11.5 dB gain against alternative devices like the NE3508M04 to determine suitability for specific system sensitivity and linearity requirements.

Part Context

This component belongs to CEL's portfolio of Low Noise GaAs FETs intended for frequencies ranging from 1 to 20 GHz. It serves as a discrete active element within RF front-end modules, providing signal amplification while minimizing added noise in sensitive receiving chains.

Replacement Considerations

The NE3509M04 offers lower noise but reduced gain. The NE3510S02 provides higher gain with similar noise characteristics. Verify pinout and package dimensions when substituting.