NE3508M04-A

Overview

The NE3508M04 is a Gallium Arsenide Heterojunction Field-Effect Transistor (GaAs HJ-FET) designed for low-noise amplifier applications. It features a gate length of 0.6 micrometers and a gate width of 800 micrometers. The device operates at a test frequency of 2 GHz with a typical noise figure of 0.45 dB and a gain of 14.0 dB. Under bias conditions of 3.0 V drain-source voltage and 30 mA drain current, it delivers a P1dB output power of +18.0 dBm.

Feature Summary

• Utilizes GaAs HJ-FET technology for high-frequency performance
• Optimized for ultra-low noise figure in signal reception chains
• Provides linear amplification with defined third-order intercept point

Applications

• Low Noise Amplifiers for 2 to 8GHz Applications
• First stage amplification in LNBs
• GPS Receiver circuits

Procurement Notes

Verify the specific package code M04 against your board layout requirements. Confirm that the supplier provides the official CEL datasheet to validate electrical characteristics. Ensure the component meets RoHS compliance standards required by your manufacturing facility before finalizing procurement.

Selection Notes

Select this component when a low noise figure near 0.45 dB is critical for system sensitivity. It is suitable for designs requiring moderate gain around 14 dB at 2 GHz. Consider the M04 plastic SMD package dimensions during PCB footprint design to ensure proper thermal and mechanical integration.

Part Context

This transistor belongs to the NEC/CEL portfolio of RF discrete components. It is categorized under Low Noise GaAs FETs intended for wireless connectivity markets including Wi-Fi, Bluetooth, and ZigBee. The device supports front-end module designs where signal integrity and minimal noise addition are primary engineering constraints.

Replacement Considerations

NE3509M04 offers lower noise but reduced gain. NE3510M04 provides higher gain with slightly higher noise. NE3503M04 is an alternative with different noise and gain characteristics.