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The NE3508M04-T2-A is a Gallium Arsenide (GaAs) High Electron Mobility Transistor (HEMT) manufactured by CEL. It is designed for low noise amplifier applications in the L to S band, specifically operating at 2 GHz. The device features an N-Channel configuration with a gate length of 0.6 μm and a gate width of 800 μm. Key electrical specifications include a typical noise figure of 0.45 dB, a linear gain of 14.0 dB, and a 1 dB compression point (P1dB) of +18.0 dBm. The component utilizes an M04 plastic surface-mount package.
Verify current availability status as the product lifecycle may be discontinued or subject to change. Confirm that the M04 package dimensions match the target PCB layout requirements. Ensure compatibility with standard GaAs handling procedures during assembly. Validate that the specific T2-A suffix meets all necessary quality and traceability standards for the intended deployment environment.
Select this component when a low noise figure and moderate gain are required at 2 GHz. Compare against alternatives like the NE3509M04 if higher gain is needed, or the NE662M04 if silicon-based solutions are preferred. Consider the M04 package size constraints relative to other available transistor footprints in the portfolio.
This part belongs to the CEL NE35xx series of Low Noise GaAs FETs. These devices are engineered for wireless markets including Wi-Fi, Bluetooth, and ZigBee. The series provides stable supply options for designers requiring reliable RF semiconductor components for high-frequency signal processing tasks.
Official substitutes within the same family include the NE3509M04 and NE3510M04. Verify pinout and package compatibility before substitution.