NE3509M04-T2-A

Overview

The NE3509M04-T2-A is an RF JFET transistor manufactured by CEL, designed for low noise amplifier applications in the L to S band. It utilizes HJFET technology with a GaAs substrate and N-Channel configuration. The device operates at a frequency of 2 GHz, providing a gain of 14 dB and a noise figure of 0.45 dB. Key electrical parameters include a P1dB compression point of 18 dBm and an OIP3 of 4.5 dBm. It features a Vds breakdown voltage of 4 V and a continuous drain current of 120 mA. The component is housed in an FTSMM-4 (M04) surface-mount package and supports operation from -40°C to +150°C.

Feature Summary

• Utilizes HJFET technology for high-performance RF amplification
• Optimized for low noise figure in L to S band frequencies
• Supports high power output with 18 dBm compression point
• Operates reliably across extended temperature ranges up to 150°C

Applications

• Low Noise Amplifier circuits
• L-band receiver front ends
• S-band signal processing systems

Procurement Notes

Verify availability status as this component may be subject to end-of-life notices or discontinuation. Confirm specific ordering suffixes match required packaging formats such as cut tape or reel. Ensure compatibility with existing PCB footprints designated for the FTSMM-4 package. Check for any product change notices that might affect pinout or electrical characteristics before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high linearity and low noise in the L to S band spectrum. Consider the 4 V drain-source breakdown voltage when designing biasing networks to ensure safe operating area compliance. Evaluate the thermal management requirements given the maximum junction temperature capability of 150°C. Compare against alternative GaAs devices if higher current handling or different package constraints are necessary for the specific application.

Part Context

This part belongs to the NE35xx series of RF transistors from CEL, which are widely used in wireless communication infrastructure. The M04 package variant offers a compact form factor suitable for dense circuit board layouts. As an HJFET device, it provides distinct advantages in noise performance compared to standard MESFET technologies, making it suitable for sensitive receiver stages.

Replacement Considerations

Public confirmed substitute part numbers: NE3508M04-T2-A.