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The NE3510M04-A is a GaAs Heterojunction Field-Effect Transistor (HJ-FET) designed for low noise amplification in the S-band. It features a 0.6 µm gate length and 280 µm gate width, housed in an M04 plastic surface-mount package. At a test frequency of 2 GHz with standard bias conditions (VDS = 3.0 V, IDS = 30 mA), it delivers a typical noise figure of 0.35 dB and a linear gain of 19.0 dB. The device supports a maximum drain-source voltage of 3 V and offers a P1dB compression point of +12.0 dBm.
Verify the specific suffix against manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the M04 package dimensions with your PCB footprint design to guarantee mechanical fitment during installation.
Select this component when circuit requirements prioritize minimal signal degradation over maximum power handling. Compare its 0.35 dB noise figure against alternatives if system sensitivity is critical. Evaluate the trade-off between its 19.0 dB gain and the +12.0 dBm linearity limit relative to your input signal levels.
This transistor belongs to CEL's portfolio of discrete RF semiconductor devices intended for high-frequency analog circuits. It serves as a fundamental building block for designing sensitive receiver stages where maintaining signal integrity at microwave frequencies is essential for overall system performance.
The NE3509M04 is a documented alternative within the same product family offering similar packaging but differing electrical characteristics.