NE3510M04-T2-A

$0.77

Description：RF MOSFET HFET 2V M04
Series：-

SKU:1bdfe2a15c45 Category: RF FETs, MOSFETs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET HFET 2V M04
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
Technology：HFET
Frequency：4GHz
Gain：16dB
Voltage - Test：2 V
Current Rating (Amps)：97mA
Noise Figure：0.45dB
Current - Test：15 mA
Power - Output：-
Voltage - Rated：4 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：SOT-343F
Supplier Device Package：M04
Configuration：-

Download product information

NE3510M04-T2-A

Overview

The NE3510M04-T2-A is a Low Noise GaAs FET, specifically an HJ-FET, manufactured by Renesas Electronics Corporation. It is designed for RF applications, including low noise amplification, signal buffering, and impedance transformation in RF signal paths. The device operates at frequencies up to 4 GHz with a rated voltage of 4 V. Key electrical parameters include a current rating of 97 mA and a test current of 15 mA. It provides a gain of 16 dB. The component is housed in an M04 package.

Feature Summary

Low noise amplification capabilities
Signal buffering functionality
Impedance transformation in RF signal paths

Applications

Low noise amplification
Signal buffering
Impedance transformation in RF signal paths

Procurement Notes

Verify product status carefully as the NE3510M04-T2-A is listed as obsolete. Support may be limited to existing customers who have already adopted these products. Confirm package type and specifications against official datasheets before procurement planning due to end-of-life status.

Selection Notes

Select this component for specific RF applications requiring low noise performance at frequencies up to 4 GHz. Consider its obsolete status and potential supply constraints. Ensure compatibility with existing designs that utilize GaAs HJ-FET technology for signal processing tasks.

Part Context

This part belongs to Renesas Electronics' portfolio of RF FETs and MOSFETs. It is categorized under Low Noise GaAs FETs. The manufacturer indicates standard quality grade unless otherwise specified. Related evaluation boards exist for design support.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, alternative sourcing or redesign may be necessary.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.