NE3512S02-A

Overview

The CEL NE3512S02-A is a GaAs pseudomorphic high electron mobility transistor (pHEMT) designed for low-noise amplifier applications. It operates at a test frequency of 12 GHz with a typical noise figure of 0.35 dB and a gain of 13.5 dB. The device utilizes a Micro-X plastic package, designated as S02, which measures 2.6 x 2.6 x 1.5 mm. It requires a gate bias voltage of 2.0 V and an operating drain current of 10 mA.

Feature Summary

• Utilizes GaAs pHEMT technology for high-frequency performance
• Micro-X plastic package design for compact integration
• Optimized for low-noise amplification in the Ku band

Applications

• Ku-band low-noise amplifiers
• Satellite communication front ends
• High-performance receiver systems

Procurement Notes

Verify the specific suffix 'A' against official documentation to confirm any distinct manufacturing or material specifications compared to the standard NE3512S02. Confirm availability status directly with CEL or authorized distributors, as component lifecycle stages may affect long-term supply stability.

Selection Notes

Select this component when designing circuits requiring minimal signal degradation at 12 GHz. Ensure the layout accommodates the Micro-X package dimensions and provides appropriate thermal management. Verify that the biasing circuitry supports the required 2.0 V gate voltage and 10 mA drain current for optimal noise performance.

Part Context

This part belongs to the CEL NE35xx series of GaAs FETs, specifically engineered for RF applications up to 20 GHz. It shares the same die characteristics as the NE3511S02 but is optimized for higher frequency operation at 12 GHz compared to the lower-frequency variants in the family.

Replacement Considerations

The NE3511S02 serves as a direct functional substitute within the same Micro-X package, though it is typically characterized for 12 GHz operation with similar parameters. Cross-reference datasheets to ensure compatibility with existing bias networks and impedance matching requirements.