SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NE3512S02-T1D-A is an N-channel Heterojunction Field-Effect Transistor (HJ-FET) manufactured by Renesas Electronics Corporation. Designed for X to Ku-band applications, this component functions as a super low noise amplifier element. It utilizes a Micro-X plastic S02 package suitable for surface mount technology. The device is engineered to provide high associated gain and minimal noise figure in satellite communication systems, specifically supporting Direct Broadcast Satellite Low Noise Block downconverter architectures.
This component belongs to the NE351x series of N-channel HJ-FETs from Renesas. It shares functional similarities with parts like the NE3511S02-T1D-A and NE3515S02-T1D-A, which are also specified for X to Ku-band super low noise amplifier applications. These devices typically utilize the same S02 package form factor.