NE3513M04-A

Overview

The NE3513M04-A is an N-channel Gallium Arsenide Heterojunction Field-Effect Transistor (HJ-FET) designed for X to Ku band applications. It operates at frequencies up to 12 GHz, providing high gain and low noise performance suitable for RF amplification. The device features a Drain-to-Source Voltage (VDS) of 4.0 V and a Gate-to-Source Voltage (VGS) rating of -3.0 V. Key electrical parameters include a maximum drain current (IDSS) of 10 mA and a power dissipation capability of 125 mW. It is housed in the FTSMM-4 (M04) surface-mount package.

Feature Summary

• N-channel GaAs HJ-FET technology optimized for high-frequency operation
• Designed for low noise and high-gain amplification in X and Ku bands
• Surface-mount M04 package configuration for compact integration

Applications

• Low Noise Amplifier (LNA) stages in satellite communication systems
• High-gain RF amplifier modules operating in X and Ku frequency bands
• Microwave receiver front-end circuits requiring minimal signal degradation

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the specific suffix (-A) matches the required voltage and current ratings. Ensure the M04 package footprint aligns with PCB design requirements. Request relevant compliance documentation such as RoHS status from authorized suppliers prior to purchase.

Selection Notes

Select this component when designing circuits for X or Ku band frequencies up to 12 GHz. Consider the 4.0 V drain-source voltage limit and 125 mW power dissipation when determining biasing conditions. Evaluate the trade-off between the specified gain and noise figure against system sensitivity requirements. Ensure thermal management strategies accommodate the surface-mount package constraints.

Part Context

This part belongs to the CEL NE35xx series of GaAs HJ-FETs, which are widely used in microwave and millimeter-wave applications. The M04 package designation indicates a specific small-outline surface-mount form factor common in RF transistor families. These devices typically serve as critical active components in linear amplifier chains where signal integrity is paramount.

Replacement Considerations

Official direct drop-in replacements may be available within the CEL product line. Verify compatibility with equivalent models such as the CE3514M4-C2 if cross-referencing is necessary. Always confirm pinout and electrical parameter alignment before substituting.