NE3513M04-T2-A

NE3513M04-T2-A

  • Description:RF MOSFET GAAS HJ-FET 2V M04
  • Series:-

SKU:8f4fcd770e92 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET GAAS HJ-FET 2V M04
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Technology:GaAs HJ-FET
  • Frequency:12GHz
  • Gain:13dB
  • Voltage - Test:2 V
  • Current Rating (Amps):60mA
  • Noise Figure:0.65dB
  • Current - Test:10 mA
  • Power - Output:125mW
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-343F
  • Supplier Device Package:M04
  • Configuration:N-Channel

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NE3513M04-T2-A

Overview

The NE3513M04-T2-A is an RF JFET transistor manufactured by CEL, designed for low-noise amplification in the L-band frequency range. It utilizes a hetero-junction field-effect technology with a silicon N-channel configuration. The component operates in depletion mode and features a single-element structure housed in a lead-free Super MiniMold M04 package with four pins. Key electrical characteristics include a minimum drain-source breakdown voltage of 3 V and a maximum drain current of 0.03 A. The device is suitable for applications requiring efficient signal processing within specified thermal limits.

Feature Summary

  • Utilizes hetero-junction FET technology for enhanced RF performance
  • Designed specifically for low-noise amplification in L-band applications
  • Features a compact, lead-free Super MiniMold M04 surface-mount package

Applications

  • L-band low-noise amplifier circuits
  • RF signal processing systems
  • Communication equipment front-ends

Procurement Notes

Verify the manufacturer designation, as this component appears under both CEL and NEC/Renesas branding in public databases. Confirm the specific datasheet version to ensure alignment with the required L-band specifications and pinout configuration. Check for RoHS compliance status corresponding to the lead-free Super MiniMold packaging. Ensure the sourcing channel provides authentic documentation matching the NE3513M04-T2-A part number to avoid substitution errors with similar models.

Selection Notes

Select this component when designing L-band circuits requiring a silicon-based hetero-junction FET with a 3 V breakdown voltage. The 4-pin Super MiniMold package is ideal for space-constrained PCB layouts. Consider the 0.03 A maximum drain current limit during biasing design. Verify that the application environment supports the standard operating temperature range associated with this plastic/epoxy封装 material.

Part Context

This device belongs to the NE351x series of RF small-signal field-effect transistors. It shares the same M04 package form factor and basic operational principles as related parts like the NE3510M04-T2-A. The series is characterized by its use in S-band and L-band applications, offering a balance between noise performance and power handling capabilities in a compact surface-mount footprint.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. The NE3510M04-T2-A shares the same package and general category but may differ in specific electrical parameters. Consult official manufacturer documentation before substituting.

NE3513M04-T2-ANE3513M04-T2-A

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