NE3514S02-A

Overview

The CEL NE3514S02-A is a low noise GaAs FET designed for RF applications up to 20 GHz. It features a gate length of 0.2 μm and a gate width of 160 μm. The device operates with a typical noise figure of 0.75 dB and a gain of 10.0 dB at 2.0 GHz under standard bias conditions (VDS = 2.0 V, IDS = 10 mA). It utilizes an S02 Micro-X Plastic package.

Feature Summary

• GaAs Heterojunction Field-Effect Transistor technology
• Micro-X Plastic package construction
• Optimized for low noise performance in high frequency circuits

Applications

• Low Noise Amplifiers
• RF Front Ends
• Wireless Communication Systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact package type and testing parameters. Confirm that the component meets all required environmental and reliability standards for the intended deployment environment before finalizing procurement.

Selection Notes

Select this component when a compact form factor is required alongside low noise characteristics in the 2 to 20 GHz range. Evaluate the trade-off between its moderate gain and superior noise figure relative to other available GaAs FET options in the portfolio.

Part Context

This component belongs to the CEL NE35xx series of Low Noise GaAs FETs. These devices are engineered for wireless connectivity solutions and RF markets, providing designers with reliable semiconductor components for signal amplification and processing tasks.

Replacement Considerations

NE3513M04

FAQ

What is the maximum operating frequency for the NE3514S02-A?

The device is specified for operation up to 20 GHz.

What package style does the NE3514S02-A utilize?

It uses the S02 Micro-X Plastic package.