NE3514S02-T1C-A

Overview

The NE3514S02-T1C-A is a pseudomorphic high-electron-mobility transistor (pHEMT) manufactured by CEL. It utilizes Gallium Arsenide (GaAs) technology and is housed in an S02 Micro-X Plastic package. The device operates at a test frequency of 20 GHz with a typical noise figure of 0.75 dB and a gain of 10.0 dB. Key electrical parameters include a gate length of 0.2 μm, a gate width of 160 μm, and an IDSS of 40 mA.

Feature Summary

• Utilizes pHEMT GaAs technology for low-noise performance
• Designed for operation up to 20 GHz
• Micro-X Plastic package construction

Applications

• Low Noise Amplifiers (LNAs)
• Front End Components
• LNBs for 12 to 20GHz Applications

Procurement Notes

Verify the specific suffix -T1C-A against official documentation to confirm tape and reel specifications or handling requirements. Confirm end-of-life status and availability through authorized distributors as standard supply may be limited.

Selection Notes

Select this component for applications requiring low noise figures at microwave frequencies up to 20 GHz. Ensure the design accommodates the S02 package dimensions and the specific biasing conditions required for the 0.2 μm gate length device.

Part Context

This part belongs to the NE35xx series of Low Noise GaAs FETs offered by CEL. These transistors are engineered for RF and wireless markets, specifically targeting front-end components and LNB applications within the 12 to 20 GHz range.

Replacement Considerations

NE3515S02-T1C-A

FAQ

What is the gate length of the NE3514S02?

The gate length is 0.2 μm.

What is the maximum operating frequency specified for this device?

The device is tested and specified for operation at 20 GHz.

What type of package does the NE3514S02 use?

It uses the S02 Micro-X Plastic package.