NE3515S02-A

Overview

The NE3515S02-A is a sample part number for the N-channel Heterojunction Field Effect Transistor (HJ-FET) manufactured by CEL. It is designed as a super low noise amplifier for X to Ku-band applications. The device utilizes a Micro-X plastic S02 package and operates on Gallium Arsenide (GaAs). Key electrical characteristics include a typical noise figure of 0.3 dB, an associated gain of 12.5 dB at 12 GHz, and a 1 dB compression point of +14 dBm. Absolute maximum ratings specify a drain-to-source voltage of 4 V, a gate-to-source voltage of -3 V, and a total power dissipation of 165 mW.

Feature Summary

• Super low noise figure with high associated gain and middle output power
• Micro-X plastic S02 package design
• N-channel heterojunction field effect transistor technology

Applications

• X to Ku-band local buffer amplifier
• PA driver amplifier
• Low noise amplifier
• Mixer
• DBS LNB and VSAT systems

Procurement Notes

Verify that the requested item is the specific evaluation sample designation NE3515S02-A rather than standard production variants like the T1C or T1D reels. Confirm compatibility with GaAs handling protocols due to arsenic content. Ensure electrostatic discharge precautions are observed during receipt and storage. Check current availability status as sample quantities may be limited compared to bulk manufacturing runs.

Selection Notes

Select this component for designs requiring ultra-low noise performance in the X to Ku-band spectrum. The device offers a balance of low noise figure and moderate output power suitable for sensitive receiver front-ends. Consider the S02 package dimensions for PCB layout constraints. Evaluate thermal management requirements against the 165 mW power dissipation limit when integrating into dense RF assemblies.

Part Context

This component belongs to the NE3515S02 family of super low noise amplifiers developed by California Eastern Laboratories (CEL). It represents a specialized gallium arsenide heterojunction field effect transistor optimized for microwave frequencies. The product line targets communication systems demanding high signal integrity and minimal noise degradation across the X and Ku frequency bands.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the difference between the NE3515S02-A and other ordering suffixes?

The NE3515S02-A is designated specifically for ordering evaluation samples. Standard production units utilize different suffixes such as -T1C or -T1D, which indicate specific reel packaging quantities.

What are the absolute maximum voltage ratings for the device?

The absolute maximum ratings specify a Drain to Source Voltage (VDS) of 4 V and a Gate to Source Voltage (VGS) of -3 V.

How should the device be disposed of safely?

Because the product uses gallium arsenide, it must be excluded from general industrial waste. Disposal requires commissioning a licensed company capable of collecting and disposing of materials containing arsenic according to relevant laws and ordinances.