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The NE3516S02-A is an N-Channel GaAs Heterojunction Field-Effect Transistor (HJ-FET) designed for radio frequency applications. It operates effectively in the X to Ku band spectrum, supporting frequencies up to 18 GHz. The device provides a noise figure of 0.9 dB and a gain of 14 dB at 12 GHz. It features a low drain-source voltage rating of 2 V and a maximum current of 10 mA, with a power dissipation capacity of 165 mW. Packaged in the S02 MicroX configuration, this component serves as a replacement for discontinued Renesas RF products.
Verify availability status carefully as this part may be classified as obsolete or end-of-life by the manufacturer. Confirm that substitute parts meet all electrical specifications required for your specific circuit design before procurement. Check for RoHS compliance documentation and ensure the supplier provides valid traceability records for quality assurance purposes.
Select this component when designing circuits requiring low noise figures in the X and Ku bands. Ensure the power supply constraints align with the 2 V drain-source voltage limit. Consider thermal management capabilities given the 165 mW power dissipation rating. Verify that the S02 package dimensions fit within the available PCB space constraints.
This transistor belongs to the family of RF FETs manufactured by CEL, which specializes in replacements for discontinued Renesas products. It falls under the category of heterojunction field-effect transistors intended for microwave and millimeter-wave applications. The S02 package type indicates a compact surface-mount configuration suitable for modern electronic assemblies.
CE3512K2 is listed as a similar available substitute. Verify pin compatibility and electrical parameter alignment before substitution.