NE3516S02-T1C-A

Overview

The NE3516S02-T1C-A is a pseudomorphic high-electron-mobility transistor (pHEMT) manufactured by CEL. It utilizes gallium arsenide (GaAs) technology and is housed in an S0-2 surface-mount package. The device operates at frequencies up to 12 GHz with a typical gain of 12.5 dB. Key electrical specifications include a drain-source breakdown voltage of 4 V, a gate-source breakdown voltage of -3 V, and a continuous drain current of 88 mA. Power dissipation is rated at 165 mW, with a maximum operating temperature of +125°C.

Feature Summary

• Super low noise performance suitable for sensitive RF front-end applications
• Pseudomorphic HEMT technology providing high gain and linearity
• Designed for operation in microwave frequency bands

Applications

• Low noise amplifier stages in wireless communication systems
• Microwave receiver front-ends
• Satellite communication equipment

Procurement Notes

Verify the specific suffix T1C-A against official CEL documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status through the manufacturer's latest certification documents. Ensure the sourcing channel provides valid traceability for this discontinued or limited-stock component type.

Selection Notes

Select this component when super low noise figure is critical for system sensitivity. Compare the 12.5 dB gain and 165 mW power dissipation against thermal constraints. Verify that the S0-2 package aligns with the target PCB layout and assembly capabilities.

Part Context

This part belongs to CEL's portfolio of GaAs pHEMT transistors designed for RF and microwave applications. These devices are engineered to deliver superior noise performance and gain stability in compact surface-mount packages, supporting modern wireless infrastructure requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified sources. Consult CEL technical support for direct replacements or evaluate equivalent pHEMT devices from other manufacturers based on matching electrical parameters.