NE3517S03-T1D-A

NE3517S03-T1D-A

$1.16
  • Description:RF MOSFET HFET 2V S03
  • Series:-

SKU:339374fb927c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HFET 2V S03
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Technology:HFET
  • Frequency:20GHz
  • Gain:13.5dB
  • Voltage - Test:2 V
  • Current Rating (Amps):70mA
  • Noise Figure:0.7dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:S03
  • Configuration:-

Download product information

NE3517S03-T1D-A

Overview

The NE3517S03-T1D-A is a Low Noise GaAs HJ-FET manufactured by Renesas Electronics Corporation. It operates at frequencies up to 20 GHz with a power gain of 13.5 dB and a noise figure of 0.7 dB. The device requires a test voltage of 2 V and supports a current rating of 70 mA. It is housed in an S03 package, specifically a 4-SMD, Flat Leads configuration. This component is classified as obsolete.

Feature Summary

  • Utilizes Gallium Arsenide High Electron Mobility Transistor technology for high-frequency performance
  • Designed for low noise applications in microwave frequency ranges
  • Optimized for stable operation at specified DC bias conditions

Applications

  • Low noise amplifier stages in RF front-ends
  • Microwave communication systems
  • Satellite navigation receivers

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Ensure that any acquired units are within their shelf life specifications and have been stored according to semiconductor handling guidelines to prevent degradation before installation.

Selection Notes

Engineers selecting this part must account for its discontinued status when designing new products. Alternative solutions should be evaluated based on similar frequency capabilities and noise performance metrics. Compatibility with existing circuit layouts using the S03 package may simplify transition efforts, but electrical parameter matching remains critical for maintaining system integrity in high-frequency designs.

Part Context

The NE3517S03 series represents Renesas's line of GaAs HJ-FETs designed for high-frequency analog applications. These devices are characterized by high electron mobility and low noise figures, making them suitable for sensitive RF reception chains. The specific T1D-A suffix denotes the tape and reel packaging variant of the standard S03 package form factor.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation due to the product's obsolete status. Designers should consult Renesas technical support for recommended cross-reference components that meet equivalent 20 GHz performance requirements.

NE3517S03-T1D-ANE3517S03-T1D-A
$1.16
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