NE3520S03-T1C-A

NE3520S03-T1C-A

  • Description:RF MOSFET GAAS HJ-FET 2V S03
  • Series:-

SKU:6000636f6d97 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET GAAS HJ-FET 2V S03
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Technology:GaAs HJ-FET
  • Frequency:20GHz
  • Gain:13.5dB
  • Voltage - Test:2 V
  • Current Rating (Amps):70mA
  • Noise Figure:0.65dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:S03
  • Configuration:-

Download product information

NE3520S03-T1C-A

Overview

The NE3520S03-T1C-A is a discontinued N-channel GaAs HJ-FET designed for K-band applications. It features a Micro-X plastic S03 package and delivers a typical noise figure of 0.65 dB with an associated gain of 13.5 dB at 20 GHz, VDS = 2 V, and ID = 10 mA. The device operates with a drain-to-source voltage up to 4.0 V and a gate-to-source voltage limit of -3.0 V. Maximum power dissipation is rated at 165 mW, with a channel temperature limit of +125 °C. The saturated drain current ranges from 25 to 70 mA.

Feature Summary

  • Low noise figure and high associated gain optimized for K-band frequencies
  • Micro-X plastic (S03) surface-mount package design
  • Gallium arsenide heterojunction field-effect transistor technology

Applications

  • 20 GHz band DBS LNB
  • K-band communication systems

Procurement Notes

This component is officially discontinued by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus inventory. Confirm that the specific ordering suffix matches the required reel quantity, as packaging options vary between standard production reels and sample quantities. Ensure compliance with RoHS directives if applicable to your region.

Selection Notes

Select this part for designs requiring low noise performance in the K-band spectrum. Verify that the circuit can accommodate the specified maximum ratings, particularly the 4.0 V drain-to-source voltage and 165 mW power dissipation limits. Consider the S03 package dimensions during PCB layout. Evaluate thermal management strategies to maintain channel temperature within the +125 °C limit under operating conditions.

Part Context

The NE3520S03 series represents a line of gallium arsenide pseudomorphic HEMTs developed for microwave applications. Manufactured originally by California Eastern Laboratories (CEL), these devices were later integrated into Renesas Electronics' portfolio. The product family targets satellite communications and radar systems where low noise and high gain are critical performance metrics.

Replacement Considerations

The datasheet explicitly lists CE3520K3 as the drop-in replacement for the NE3520S03 series.

FAQ

What is the recommended operating range for drain current?

The recommended operating range for drain current is 5 mA to 15 mA, with a typical value of 10 mA.

How should the device be disposed of due to its material composition?

The product contains gallium arsenide. It must not be burned, crushed, or dissolved. Dispose of it as industrial waste subject to special control using a licensed disposal company, excluding it from general household garbage.

What is the maximum number of reflow soldering processes allowed?

The maximum number of infrared reflow processes allowed is three times.

NE3520S03-T1C-ANE3520S03-T1C-A

Click on the inquiry